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BLF4G10LS-120
UHF power LDMOS transistor
Rev. 01 -- 10 January 2006 Product data sheet
1. Product profile
1.1 General description
120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
Table 1: Typical performance f = 920 MHz to 960 MHz; Th = 25 C; in a class-AB production test circuit; typical values. Mode of operation CW GSM EDGE 2-tone
[1] [2]
VDS (V) 28 28 28
PL (W) 120 48 (AV)
Gp D (dB) (%) 19 19 57 40 46
ACPR400 (dBc) -61 [1] -
ACPR600 (dBc) -72 [2] -
EVM (%) 1.5 -
IMD3 (dBc) -31
120 (PEP) 19
ACPR400 at 30 kHz resolution bandwidth ACPR600 at 30 kHz resolution bandwidth
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
s Typical GSM EDGE performance at a frequency of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 650 mA x Load power = 48 W (AV) x Gain = 19 dB (typ) x Efficiency = 40 % (typ) x ACPR400 = -61 dBc (typ) x ACPR600 = -72 dBc (typ) x EVMrms = 1.5 % (typ) s Easy power control s Excellent ruggedness s High efficiency s Excellent thermal stability s Designed for broadband operation (800 MHz to 1000 MHz) s Internally matched for ease of use
Philips Semiconductors
BLF4G10LS-120
UHF power LDMOS transistor
1.3 Applications
s RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier applications in the 868 MHz to 961 MHz frequency range.
2. Pinning information
Table 2: Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
1 3 2
Symbol
1 2 3
sym039
[1]
Connected to flange
3. Ordering information
Table 3: Ordering information Package Name BLF4G10LS-120 Description earless flanged LDMOST ceramic package; 2 leads Version SOT502B Type number
4. Limiting values
Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min -0.5 -65 Max 65 +15 12 +150 200 Unit V V A C C
5. Thermal characteristics
Table 5: Symbol Rth(j-case) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 C PL = 60 W PL = 120 W 0.62 0.52 0.71 0.61 K/W K/W Min Typ Max Unit
9397 750 14547
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 January 2006
2 of 13
Philips Semiconductors
BLF4G10LS-120
UHF power LDMOS transistor
6. Characteristics
Table 6: Characteristics Tj = 25 C unless otherwise specified. Symbol V(BR)DSS VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) Crs Parameter drain-source breakdown voltage gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance Conditions VGS = 0 V; ID = 0.9 mA VDS = 10 V; ID = 180 mA VDS = 28 V; ID = 900 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 9 V; VDS = 10 V VGS = 15 V; VDS = 0 V VDS = 10 V; ID = 10 A VGS = VGS(th) + 6 V; ID = 6 A VGS = 0 V; VDS = 28 V; f = 1 MHz Min 65 2.5 2.70 27 Typ 3.1 3.20 30 9.0 90 2.5 Max 3.5 3.70 2.5 300 Unit V V V A A nA S m pF
7. Application information
Table 7: Application information Mode of operation: GSM EDGE; f = 920 MHz and 960 MHz; RF performance at VDS = 28 V; IDq = 650 mA; Tcase = 25 C; unless otherwise specified, in a class AB production test circuit. Symbol Gp IRL D ACPR400 ACPR600 EVMrms EVMM Parameter power gain input return loss drain efficiency Conditions PL(AV) = 48 W PL(AV) = 48 W PL(AV) = 48 W Min Typ Max Unit -58 -68 2.5 8.5 dB % dBc dBc % % 17.5 19 35.8 40 -61 -72 1.5 5
-8.0 -5.5 dB
adjacent channel power ratio (400 kHz) PL(AV) = 48 W adjacent channel power ratio (600 kHz) PL(AV) = 48 W rms EDGE signal distortion error peak EDGE signal distortion error PL(AV) = 48 W PL(AV) = 48 W
7.1 Ruggedness in class-AB operation
The BLF4G10LS-120 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 650 mA; PL = 120 W (CW); f = 960 MHz.
9397 750 14547
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 January 2006
3 of 13
Philips Semiconductors
BLF4G10LS-120
UHF power LDMOS transistor
20 Gp (dB) 18 Gp
001aac410
70 60 50
D (%)
20 Gp (dB) 18 D Gp
001aac411
60
D (%)
50
40
16
D
40 30 20
16
30 14 14 20 12 10 10 0 20 40 60 80 100 120 140 160 180 PL (W) 0 10 0 10 20 30 40 50 60 70 80 90 PL(AV) (W) 12
10
0
VDS = 28 V; IDq = 650 mA; Tcase = 25 C; f = 960 MHz
VDS = 28 V; IDq = 650 mA; Tcase = 25 C; f = 960 MHz
Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical values
Fig 2. Two-tone CW power gain and drain efficiency as functions of average load power; typical values
0 IMD3 (dBc) -20
(1)
0 IMD (dBc) -20
001aac412
001aac413
(2)
-40
IMD3 IMD5 IMD7
-40
(3) (4)
-60
-60
-80 0 20 40 60 80 PL(AV) (W)
-80 0 20 40 60 80 PL(AV) (W)
VDS = 28 V; IDq = 650 mA; Tcase = 25 C; f = 960 MHz
VDS = 28 V; Tcase = 25 C; f = 960 MHz (1) IDq = 550 mA (2) IDq = 650 mA (3) IDq = 750 mA (4) IDq = 850 mA
Fig 3. Intermodulation distortion as a function of average load power; typical values
Fig 4. Third order intermodulation distortion as a function of average load power; typical values
9397 750 14547
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 January 2006
4 of 13
Philips Semiconductors
BLF4G10LS-120
UHF power LDMOS transistor
20 Gp (dB) 19 Gp
001aac414
50 D (%) 40
-50 ACPR (dBc) -60 ACPR400
001aac415
18 D 17
30 -70 20 -80 ACPR600
16
10
15 0 20 40
0 60 80 PL(AV) (W)
-90 0 20 40 60 80 PL(AV) (W)
VDS = 28 V; IDq = 650 mA; Tcase = 25 C; f = 960 MHz
VDS = 28 V; IDq = 650 mA; Tcase = 25 C; f = 960 MHz
Fig 5. GSM EDGE power gain and drain efficiency as functions of average load power; typical values
001aac416
Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as a function of average load power; typical values
-56 ACPR (dBc)
001aac417
10 EVM (%) 8 EVMM
4 EVM (%) 3 3 2
-60
6 -64 4 EVMrms 2 -68 EVMrms ACPR400
2 1 1
0 0 20 40 60 80 PL(AV) (W)
-72 0 10 20 30 40 D (%) 50
0
VDS = 28 V; IDq = 650 mA; Tcase = 25 C; f = 960 MHz
VDS = 28 V; IDq = 650 mA; Tcase = 25 C; f = 960 MHz
Fig 7. GSM EDGE rms EVM and peak EVM as functions of average load power; typical values
Fig 8. GSM EDGE ACPR at 400 kHz and rms EVM as functions of drain efficiency; typical values
9397 750 14547
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 January 2006
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Product data sheet Rev. 01 -- 10 January 2006
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. 9397 750 14547
8. Test information
Philips Semiconductors
VDS
VGS
R1
C5 C6 C7 C8 C10
C9
C1
C4
RF in
C2 C3
RF out
001aad830
See Table 8 for list of components.
Fig 9. Class-AB test circuit at f = 960 MHz
BLF4G10LS-120
UHF power LDMOS transistor
6 of 13
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Product data sheet Rev. 01 -- 10 January 2006
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. 9397 750 14547
Philips Semiconductors
VDS
VGS
R1 C9 C5 C6 C7 C8 C10
C1
C2
C3
C4
PHILIPS BLF4G10-120 rev.1 in
PHILIPS BLF4G10-120 rev.1 out
001aad831
Striplines are on a double copper-clad Rogers 6006 Printed-Circuit Board (PCB) (r = 6.2); thickness = 0.025 inches. See Table 8 for list of components.
Fig 10. Component layout for 960 MHz test circuit
BLF4G10LS-120
UHF power LDMOS transistor
7 of 13
Philips Semiconductors
BLF4G10LS-120
UHF power LDMOS transistor
List of components (see Figure 9 and Figure 10) Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor tantalum capacitor Philips electrolytic capacitor Philips chip resistor
[1]
Table 8:
Component C1, C4, C5, C6 C2 C3 C7 C8, C9 C10 R1
[1]
Value 68 pF 5.1 pF 3.0 pF 1 F 10 F; 35 V 220 F 5.1
Dimensions
Catalogue number
[1]
[1]
1812X7R105KL2AB
0603
American Technical Ceramics type 100B or capacitor of same quality.
9397 750 14547
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 January 2006
8 of 13
Philips Semiconductors
BLF4G10LS-120
UHF power LDMOS transistor
9. Package outline
Earless flanged LDMOST ceramic package; 2 leads SOT502B
D
A F
3
D1 D
U1
c
L
1
H
U2
E1
E
2
b w2 M D M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 0.210 0.170 Q 1.70 1.45 U1 20.70 20.45 U2 9.91 9.65 w2 0.25
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.067 0.815 0.057 0.805
0.390 0.010 0.380
OUTLINE VERSION SOT502B
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 99-12-28 03-01-10
Fig 11. Package outline SOT502B
9397 750 14547 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 January 2006
9 of 13
Philips Semiconductors
BLF4G10LS-120
UHF power LDMOS transistor
10. Abbreviations
Table 9: Acronym CDMA CW EDGE ESR EVM GSM IDq LDMOS PEP RF SMD VSWR Abbreviations Description Code Division Multiple Access Continuous Wave Enhanced Data rates for GSM Evolution Equivalent Series Resistance Error Vector Magnitude Global System for Mobile communications quiescent drain current Laterally Diffused Metal Oxide Semiconductor Peak Envelope Power Radio Frequency Surface Mount Device Voltage Standing Wave Ratio
9397 750 14547
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 January 2006
10 of 13
Philips Semiconductors
BLF4G10LS-120
UHF power LDMOS transistor
11. Revision history
Table 10: Revision history Release date 20060110 Data sheet status Product data sheet Change notice Doc. number 9397 750 14547 Supersedes Document ID BLF4G10LS-120_1
9397 750 14547
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 January 2006
11 of 13
Philips Semiconductors
BLF4G10LS-120
UHF power LDMOS transistor
12. Data sheet status
Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
13. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
15. Trademarks
Notice -- All referenced brands, product names, service names and trademarks are the property of their respective owners.
14. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors
16. Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14547
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 January 2006
12 of 13
Philips Semiconductors
BLF4G10LS-120
UHF power LDMOS transistor
17. Contents
1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information . . . . . . . . . . . . . . . . . . . . 12
(c) Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 10 January 2006 Document number: 9397 750 14547
Published in The Netherlands

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